60R580P 8A 600V N-Channel Mosfet
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60R580P 8A 600V N-Channel Mosfet.
Feature
- Advanced Process Technology
- 175°C Operating Temperature
- Fast Switching
- N-Channel
- Fully Avalanche Rated
Specification:-
- Type Designator: MMIS60R580P
- Marking Code: 60R580P
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 70 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 8 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 34 nS
- Drain-Source Capacitance (Cd): 428 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm
Pins : 1. GATE 2. DRAIN 3. SOURCE
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