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The AP4435B is a P-channel MOSFET designed for power management applications. It is commonly used in DC-DC converters, battery management systems, and general-purpose switching circuits. The device is housed in an SOP-8L package, making it suitable for compact designs.
Parameter | Value |
---|---|
Maximum Drain-Source Voltage (V<sub>DS</sub>) | -30V |
Maximum Drain Current (I<sub>D</sub>) | -9.3A (at 25°C) |
Gate Threshold Voltage (V<sub>GS(th)</sub>) | -1V to -3V |
On-State Resistance (R<sub>DS(on)</sub>) | 20mΩ (at V<sub>GS</sub> = -10V) |
Maximum Power Dissipation (P<sub>D</sub>) | 2.5W |
Operating Temperature | -55°C to +150°C |
Package | SOP-8L |
Pin | Function |
---|---|
1-3 | Source (S) |
4 | Gate (G) |
5-8 | Drain (D) |
The AP4435B is commonly used in low-side switching configurations in power circuits. Being a P-channel MOSFET, it is ideal for high-side switching when the source is connected to a positive voltage.
High-Side Switch with AP4435B and Microcontroller:
When the GPIO pin drives the gate low, the MOSFET turns on, supplying power to the load.
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