AP8003
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AP8003 Transistor: Specifications
Type: NPN Silicon Epitaxial Planar Transistor
Use Case: Designed primarily for general-purpose low-frequency switching and amplification applications.
Key Electrical Characteristics
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | V<sub>CBO</sub> | 40 V | Volts |
| Collector-Emitter Voltage | V<sub>CEO</sub> | 25 V | Volts |
| Emitter-Base Voltage | V<sub>EBO</sub> | 5 V | Volts |
| Collector Current | I<sub>C</sub> | 500 mA | Milliamps |
| Power Dissipation | P<sub>tot</sub> | 625 mW | Milliwatts |
| DC Current Gain (h<sub>FE</sub>) | h<sub>FE</sub> | 100–300 (at I<sub>C</sub> = 2 mA) | — |
| Transition Frequency | f<sub>T</sub> | 250 MHz (typ.) | Megahertz |
Package Type
-
TO-92 (commonly used for small-signal transistors)
Applications
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Signal amplification
-
Switching circuits
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Hobby electronics and prototyping
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