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FAN7382 Half-Bridge Gate-Driver IC

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onsemi

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 the FAN7382, a popular half-bridge gate driver IC from onsemi (formerly Fairchild Semiconductor).

Overview

The FAN7382 is a monolithic high-voltage gate drive IC designed to drive both high-side and low-side N-Channel MOSFETs or IGBTs in a half-bridge configuration. It is widely used in switching power applications such as motor drives, power supplies, and inverters for appliances and industrial systems.

Its key function is to translate low-power logic signals from a microcontroller (MCU) or PWM controller into high-current, high-voltage signals necessary to rapidly switch power transistors on and off.


Key Features:

  1. High-Voltage Operation: Features a high-side floating channel designed for bootstrap operation, allowing it to drive a high-side switch with a voltage up to +600V.

  2. Wide Supply Voltage Range (VCC): The logic and low-side driver operates from 10V to 20V, making it compatible with standard 12V or 15V gate drive supplies.

  3. High Output Current: Capable of sourcing/sinking +250 mA / -350 mA peak current. This allows for fast switching of large MOSFET/IGBT gates, minimizing switching losses.

  4. Matched Propagation Delays: The propagation delays for the high-side and low-side channels are closely matched (< 50 ns), which is critical for preventing shoot-through currents in the half-bridge.

  5. Integrated Dead Time: An internal dead time (typically 540 ns) is generated between the shut-down of one transistor and the turn-on of its complementary partner. This is a crucial safety feature to prevent both transistors in the same leg from being on simultaneously (shoot-through), which would cause a catastrophic short circuit.

  6. Under-Voltage Lockout (UVLO): For both the high-side and low-side drivers. If the supply voltage (VCC) drops below a specified threshold (typically ~8.7V), the outputs are disabled, preventing the power switches from operating in a linear (high-loss) region, which could destroy them.

  7. dv/dt Immunity: The high-side channel is immune to high voltage transient conditions, ensuring stable operation under noisy switching conditions.

  8. CMOS/LSTTL Compatible Inputs: The input pins are compatible with standard 3.3V and 5V logic levels, allowing for direct interfacing with microcontrollers and DSPs.


Pin Configuration (Typically an 8-pin DIP or SOIC)

Pin #Pin NameFunction
1VCCLow-side and control logic supply voltage (typically +12V to +15V).
2HINHigh-side Input: Logic input to control the high-side output (HO).
3LINLow-side Input: Logic input to control the low-side output (LO).
4GNDGround reference for the IC's control logic and low-side driver.
5LOLow-side Output: Connects directly to the gate of the low-side MOSFET/IGBT.
6VSHigh-side Floating Supply Return: The return path for the high-side driver; connected to the switch node (the source of the high-side MOSFET).
7HOHigh-side Output: Connects directly to the gate of the high-side MOSFET/IGBT.
8VBHigh-side Floating Supply: The positive supply voltage for the high-side driver; connected to the bootstrap capacitor.

Internal Block Diagram and How It Works

A simplified explanation of its operation:

  1. Input Stage: The logic signals at HIN and LIN are received. The internal logic processes these signals, ensuring they are level-shifted to the correct voltages for the high- and low-side drivers.

  2. Dead Time Generation: The internal circuitry automatically inserts a fixed dead time between the falling edge of one signal and the rising edge of the complementary signal.

  3. Output Drivers:

    • The Low-Side Driver is referenced to GND. It directly drives the LO pin.

    • The High-Side Driver is a "floating" circuit referenced to the VS pin (the switch node). Its power comes from the voltage between VB and VS. This is generated using a bootstrap circuit.

  4. Bootstrap Circuitry (External): This is a critical part of using the FAN7382. It consists of a bootstrap diode (D_BS) and a bootstrap capacitor (C_BS).

    • When the low-side switch (Q2) is ON, the VS pin is pulled close to GND.

    • This allows the VCC supply to charge the capacitor (C_BS) through the diode (D_BS), building up a voltage of ~VCC across it.

    • When the high-side needs to be turned on, the driver uses the charge stored in C_BS to power the high-side gate drive circuit. The voltage at VB becomes VS + V_CBS, providing the necessary voltage to drive the high-side gate above the switch node voltage (VS).

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