H20T1202 20A 1200V Power IGBT Transistor.

Applications:
• Inductive Cooking
• Soft Switching Applications
Features
Reverse Conducting IGBT with monolithic body diode
• Powerful monolithic Body Diode with a very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature-stable behaviour
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V CE(sat)
• Low EMI
• Qualified according to JEDEC 1 for target applications
• Pb-free lead plating; RoHS compliant