The NCE4953 is a Dual P-Channel Enhancement Mode Power MOSFET typically supplied in a SOP-8 surface-mount package. It is designed for applications such as a load switch or in PWM (Pulse Width Modulation) applications.

Here are some key specifications:

• FET Type: Dual P-Channel MOSFET

• Package: SOP-8 (Small Outline Package, 8-pin)

• Drain-Source Voltage ($V_{DSS}$): -30 V (Absolute Maximum)

• Continuous Drain Current ($I_D$): -5.1 A (at $T_C=25^{\circ }C$)

• Drain-Source On-Resistance ($R_{DS(ON)}$) (Max):

  • Typically 55 m$\Omega$ at VGS​ = -10 V, ID​ = -5.1 A

  • Typically 105 m$\Omega$ at VGS​ = -4.5 V, ID​ = -4.2 A

• Power Dissipation ($P_D$): 2.5 W (Maximum, $T_A=25^{\circ }C$)

• Gate Threshold Voltage ($V_{GS(th)}$): -1 V to -3 V (Typical: -1.6 V)